Semiconductor device structure with resistive element

A semiconductor device structure, comprising:

• a dielectric layer;
• a conductive feature laterally surrounded by the dielectric layer;
• a barrier layer between the conductive feature and the dielectric layer, wherein the barrier layer contains nitrogen;
• and
• a resistive element electrically connected to the conductive feature, wherein the resistive element has a first resistance, the barrier layer has a second resistance, and the first resistance is higher than the second resistance.

A semiconductor device structure, comprising:

• a conductive feature;
• a first dielectric layer laterally surrounding the conductive feature;
• a resistive element electrically connected to the conductive feature;
• a conductive via extending across a topmost surface of the resistive element, wherein a contact area between the resistive element and the conductive feature is wider than the conductive via;
• and
• a second dielectric layer over the first dielectric layer, wherein the second dielectric layer laterally surrounds a portion of the resistive element and a portion of the conductive via.