Semiconductor structure and manufacturing method of the same

A manufacturing method of a semiconductor structure, comprising:

• forming first active areas, a second active area, and a third active area, wherein the first active areas define a cell region, and the second active area and the third active area define a peripheral region;
• forming a first dielectric layer on the first active areas, the second active area, and the third active area;
• forming a patterned region in the first dielectric layer, wherein the patterned region comprises a cavity region and a dielectric region, the cavity region surrounds the dielectric region, and the dielectric region corresponds to the second active area;
• forming a filling layer in the cavity region;
• forming a cap layer on the first dielectric layer;
• forming a second dielectric layer on the cap layer;
• forming first contact holes and at least one second contact hole, wherein the first contact holes and the second contact hole penetrate the second dielectric layer, the cap layer, and the first dielectric layer, each of the first contact holes exposes a portion of one of the first active areas, and the second contact hole replaces the dielectric region and exposes a portion of the second active area;
• and
• filling metal layers into the first contact holes and the second contact hole.