Transistor gate contacts and methods of forming the same

A method comprising:

• etching a first contact opening through an etch stop layer to expose a gate structure and a gate spacer, the gate spacer disposed along a sidewall of the gate structure;
• removing the gate spacer to extend the first contact opening along the sidewall of the gate structure to form an extended contact opening;
• forming a contact spacer in an upper portion of the extended contact opening over the gate structure, the contact spacer sealing a lower portion of the extended contact opening along the sidewall of the gate structure to form a void from the lower portion of the extended contact opening;
• and
• forming a gate contact in the upper portion of the extended contact opening, the gate contact connected to the gate structure, the contact spacer disposed around the gate contact.

A method comprising:

• etching a contact opening through an etch stop layer to expose a gate structure and a gate spacer, the gate spacer disposed along a sidewall of the gate structure;
• expanding the contact opening to expose a source/drain contact, the source/drain contact connected to a source/drain region, the gate spacer disposed along a sidewall of the source/drain region;
• removing the gate spacer to extend the contact opening along the sidewall of the gate structure and along the sidewall of the source/drain region to form an extended contact opening;
• forming a contact spacer in an upper portion of the extended contact opening over the gate structure, the contact spacer sealing a lower portion of the extended contact opening along the sidewall of the gate structure and along the sidewall of the source/drain region;
• and
• forming a gate contact in the upper portion of the extended contact opening, the gate contact connected to the gate structure and to the source/drain contact, a portion of the contact spacer disposed beneath the gate contact.