Methods of manufacture of semiconductor devices having redistribution layer using dielectric material having photoactive component
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWei-Chih Chen, Yu-Hsiang Hu, Hung-Jui Kuo, Sih-Hao Liao
Life of this patent
Estimating the term…
Abstract
A passivation layer and conductive via are provided, wherein the transmittance of an imaging energy is increased within the material of the passivation layer. The increase in transmittance allows for a greater cross-linking that helps to increase control over the contours of openings formed within the passivation layer. Once the openings are formed, the conductive vias can be formed within the openings.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- forming a redistribution layer over a substrate;
- applying a first dielectric material to the redistribution layer and the substrate, wherein the first dielectric material has a transmittance to a first energy of greater than 0.5%, the first dielectric material comprising:
- a first photoactive compound (PAC) with the following structure:
- a second PAC with at least two rings, the second PAC having the following structure:
- imaging the first dielectric material with the first energy.
A method of manufacturing a semiconductor device, the method comprising:
- forming a redistribution layer over a substrate;
- applying a first dielectric material to the redistribution layer and the substrate, wherein the first dielectric material has a transmittance to a first energy of greater than 0.5%, wherein the first dielectric material comprises:
- a first photoactive compound (PAC) with the following structure:
- a second PAC having the following structure:
- wherein n is between 1 and 1000;
- and
- imaging the first dielectric material with the first energy.
A method of manufacturing a semiconductor device, the method comprising:
- forming a redistribution layer over a substrate, the substrate comprising aluminum nitride;
- applying a first dielectric material to the redistribution layer and the substrate, wherein the first dielectric material has a transmittance to a first energy of greater than 0.5%, the first dielectric material comprising multiple different photoactive compounds (PACs) with different numbers of rings, each of the multiple different PACs having at least one ring;
- imaging the first dielectric material with the first energy;
- and
- removing a film tape from the substrate, wherein the removing the film tape exposes a conductive element extending through the substrate.
Dependencies are inferred from the claim text.