Semiconductor structure and method for manufacturing same

A method for manufacturing a semiconductor structure, comprising:

• providing a base, the base comprising a conductive column region;
• forming a first through hole in the base of the conductive column region, a bottom of the first through hole being provided with at least one first protruding structure;
• filling the first through hole to form a conductive column, the conductive column being provided with a groove at a first position corresponding to the first protruding structure, and the conductive column being provided with a first protruding part defining the groove;
• etching the base close to the first protruding structure to expose a bottom of the groove;
• and
• forming an electric connection layer filling up the groove, the electric connection layer being provided with a second protruding part at a second position corresponding to the groove;
• the method further comprising:
• before forming the first through hole, forming at least one initial isolation structure in the base, wherein the initial isolation structure is at least located in partial conductive column region;
• and the forming the first through hole comprises:
• removing the initial isolation structure located in the conductive column region until the base right below the initial isolation structure is exposed;
• and
• etching the base located in the conductive column region to form the first through hole.