US 12,119,232 B2 · Etching isolation features and dense features within a substrate

Abstract

Systems and methods for etching different features in a substantially equal manner are described. One of the methods includes applying a low frequency bias signal during a low TCP state and applying a high frequency bias signal during a high TCP state. The application of the low frequency bias signal during the low TCP state facilitates generation of hot neutrals, which are used to increase an etch rate of etching dense features compared to an etch rate for etching isolation features. The application of the high frequency bias signal during the high TCP state facilitates generation of ions to increase an etch rate of etching the isolation features compared to an etch rate of etching the dense features. After applying the low frequency bias signal during the low TCP state and the high frequency bias signal during the high TCP state, the isolation and dense features are etched similarly.

Claims20

Dependent claims

A method for etching isolation and dense features within a substrate, comprising:

supplying a first frequency bias radio frequency (RF) signal to a first impedance matching circuit;
supplying a second frequency bias RF signal to the first impedance matching circuit;
and
pulsing a third RF signal between a first state and a second state to provide the third RF signal to a second impedance matching circuit, wherein the first frequency bias RF signal is supplied during the first state to etch the dense features and the second frequency bias RF signal is supplied during the second state to etch the isolation features.

1 more element

Dependencies are inferred from the claim text.

Etching isolation features and dense features within a substrate

Life of this patent

Etching isolation features and dense features within a substrate

Life of this patent

Abstract

Claims20