Semiconductor device and method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Lien Huang, Guan-Ren Wang, Ching-Feng Fu
Life of this patent
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Abstract
In an embodiment, a structure includes: a contact etch stop layer (CESL) over a substrate; a fin extending through the CESL; an epitaxial source/drain region in the fin, the epitaxial source/drain region extending through the CESL; a silicide contacting upper facets of the epitaxial source/drain region; a source/drain contact contacting the silicide, lower facets of the epitaxial source/drain region, and a first surface of the CESL; and an inter-layer dielectric (ILD) layer surrounding the source/drain contact, the ILD layer contacting the first surface of the CESL.
Claims20
A device comprising:
- an isolation region on a substrate;
- a dielectric layer on the isolation region, the dielectric layer comprising a different dielectric material than the isolation region;
- a first semiconductor fin extending above the dielectric layer;
- a source/drain region in the first semiconductor fin, the source/drain region having upper facets and lower facets, the upper facets and the lower facets raised beyond sidewalls of the first semiconductor fin;
- an inter-layer dielectric on the source/drain region and the dielectric layer;
- a source/drain contact extending through the inter-layer dielectric, the source/drain contact physically contacting the lower facets of the source/drain region;
- a metal-semiconductor alloy region between the source/drain contact and the upper facets of the source/drain region;
- and
- a gate structure above the dielectric layer.
A device comprising:
- an isolation region on a substrate;
- a contact etch stop layer on the isolation region;
- a first fin extending through the contact etch stop layer and the isolation region;
- a second fin extending through the contact etch stop layer and the isolation region;
- an epitaxial source/drain region in the first fin and the second fin, the epitaxial source/drain region disposed over a first portion of the contact etch stop layer, the first portion of the contact etch stop layer laterally disposed between the first fin and the second fin;
- an inter-layer dielectric on the epitaxial source/drain region and a second portion of the contact etch stop layer;
- and
- a source/drain contact extending through the inter-layer dielectric, the source/drain contact contacting the second portion of the contact etch stop layer and lower facets of the epitaxial source/drain region.
A device comprising:
- a contact etch stop layer over a substrate;
- a fin extending through the contact etch stop layer;
- an epitaxial source/drain region in the fin, the epitaxial source/drain region extending through the contact etch stop layer;
- a metal-semiconductor alloy region contacting upper facets of the epitaxial source/drain region;
- a source/drain contact contacting the metal-semiconductor alloy region, lower facets of the epitaxial source/drain region, and a first surface of the contact etch stop layer;
- an inter-layer dielectric surrounding the source/drain contact, the inter-layer dielectric contacting the first surface of the contact etch stop layer;
- a gate structure on the contact etch stop layer and a sidewall of the fin;
- and
- a gate spacer between the gate structure and the epitaxial source/drain region.
Dependencies are inferred from the claim text.