Method of manufacturing semiconductor structure

A method of manufacturing a semiconductor structure, comprising:

• receiving a first die and a second die, the first die comprising a first sacrificial layer disposed thereon and the second die comprising a second sacrificial layer disposed thereon, wherein the first die and the second die comprise different heights;
• disposing a molding surrounding the first die and the second die;
• removing a portion of the molding to expose a sidewall of the first sacrificial layer and a sidewall of the second sacrificial layer;
• removing the first sacrificial layer from the first die and the second sacrificial layer from the second;
• and
• disposing a polymer over the first die, the second die and the molding, wherein the polymer has a first bottom surface over the first die, a second bottom surface over the second die and a third bottom surface over the molding, and the second bottom surface is at a level substantially same as the third bottom surface.

A method of manufacturing a semiconductor structure, comprising:

• receiving a first die and a second die, the first die comprising a first sacrificial layer disposed thereon and the second die comprising a second sacrificial layer disposed thereon, wherein a thickness of the first sacrificial layer is different from a thickness of the second sacrificial layer;
• disposing a molding surrounding the first die and the second die;
• removing the first sacrificial layer from the first die and the second sacrificial layer from the second die;
• and
• disposing a polymer over the first die, the second die and the molding, wherein the polymer has a first surface contacting the first die, a second surface contacting the second die and a third surface contacting the molding, and the second surface is at a level substantially same as the third surface.