Deposition method
AssigneeASM IP Holding B.V.
InventorsChiyu Zhu, Henri Jussila, Qi Xie
Life of this patent
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Abstract
A method of selectively depositing a material on a substrate with a first and second surface, the first surface being different than the second surface. The depositing of the material on the substrate comprises: supplying a bulk precursor comprising metal atoms, halogen atoms and at least one additional atom not being a metal or halogen atom to the substrate; and supplying a reactant to the substrate. The bulk precursor and the reactant have a reaction with the first surface relative to the second surface to form more material on the first surface than on the second surface.
Claims20
A method of selectively depositing a metal on a substrate, the method comprising:
- providing a substrate comprising a gap with a first surface at a bottom of the gap and a second surface at a top of the gap, the first surface being different than the second surface;
- depositing the metal on the substrate by repeating the steps of:
- supplying a bulk precursor comprising a transition metal atom, a halogen atom, and at least one chalcogen atom;
- and
- supplying a reactant to the substrate, whereby the bulk precursor and the reactant have a reaction with the first surface relative to the second surface to form more material on the first surface than on the second surface to thereby fill the gap with the metal.
A method of selectively depositing a transition metal on a substrate, the method comprising:
- providing a substrate with a gap having a bottom comprising a first surface and a top comprising a second surface, the first surface being different than the second surface;
- depositing the transition metal on the substrate by:
- supplying a bulk precursor comprising a transition metal atom, a halogen atom, and at least one additional atom not being a metal or halogen atom;
- and
- supplying a reactant to the substrate, whereby the bulk precursor and the reactant have a reaction with the first surface relative to the second surface to form more material on the first surface than on the second surface to thereby fill the gap with the transition metal,
- wherein the reactant comprises hydrogen atoms.
Dependencies are inferred from the claim text.