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US 12,119,223 B2Granted
Single precursor low-k film deposition and UV cure for advanced technology node
AssigneeApplied Materials, Inc.
InventorsBo Xie, Ruitong Xiong, Sure K. Ngo, Kang Sub Yim, Yijun Liu, Li-Qun Xia
Life of this patent
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Abstract
Method of forming low-k films with reduced dielectric constant, reduced CHx content, and increased hardness are described. A siloxane film is on a substrate surface using a siloxane precursor comprising O—Si—O bonds and cured using ultraviolet light.
Claims20
A method of forming a low-k film, the method comprising:
- depositing a siloxane film on a substrate surface by exposing the substrate surface to a siloxane precursor comprising O—Si—O bonds, the siloxane film having an initial CH content and an initial dielectric constant;
- and
- curing the siloxane film by exposing the siloxane film to ultraviolet light to form a low-k film, the low-k film having a cured CH content and cured silicon cage to silicon network ratio, the cured CH content lower than the initial CH content.
A method of forming a low-k film, the method comprising:
- depositing a siloxane film on a substrate surface by exposing the substrate surface to a siloxane precursor comprising O—Si—O bonds with an RF plasma with a frequency greater than or equal to 13.56 MHz and a power in the range of 50 to 1000 W at a temperature in the range of 200° C. to 350° C., the siloxane film having an initial CH content greater than 4.5%, a hardness less than 2 GPa and an initial dielectric constant greater than 3.5;
- and
- curing the siloxane film by exposing the siloxane film to ultraviolet light in an inert environment comprising helium and argon at a pressure in the range of 3 to 100 Torr, at a temperature in the range of 150° C. to 400° C. for a time in the range of 1 to 10 minutes to form a low-k film, the low-k film having a cured CH content and cured silicon cage to silicon network ratio, the cured CH content lower than the initial CH content.
Dependencies are inferred from the claim text.