Methods for filling a gap feature on a substrate surface and related semiconductor structures

A method for filling a gap feature on a substrate surface, the method comprising:

• providing a substrate comprising a non-planar surface comprising one or more gap features;
• conformally depositing a metal oxide film over a surface of the one or more gap features by a cyclical deposition process, wherein the metal oxide comprises Zr, Cu, Fe, or Al;
• contacting the metal oxide film with an organic ligand vapor;
• and
• converting at least a portion of the metal oxide film to a porous material thereby filling the one or more gap features;
• wherein the cyclical deposition process comprises at least one unit cycle, one unit cycle comprising:
• contacting the substrate with a metal vapor phase precursor;
• and
• contacting the substrate with an oxidizing precursor.