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US 12,119,219 B2Granted
Film forming method, method for manufacturing semiconductor device, film forming device, and system for manufacturing semiconductor device
AssigneeTokyo Electron Limited
InventorsHiroaki Ashizawa, Hideo Nakamura, Yosuke Serizawa, Yoshikazu Ideno
Life of this patent
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Abstract
A method of forming a group V metal nitride film on a substrate includes: providing the substrate within a processing container; and forming the group V metal nitride film on the substrate by alternately supplying, into the processing container, a raw material gas including a group V metal and a reducing gas including a nitrogen-containing gas.
Claims6
A method of manufacturing a semiconductor device, the method comprising:
- forming a seed layer on a surface of a substrate;
- and
- forming a group V metal nitride film on the seed layer by alternately supplying a raw material gas including a group V metal and a reducing gas including a nitrogen-containing gas,
- wherein the seed layer is one of a titanium nitride film or a silicon nitride film.
1 more element
Dependencies are inferred from the claim text.