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US 12,119,211 B2Granted
Substrate processing apparatus
AssigneeASM IP Holding B.V.
InventorChangMin Lee
Life of this patent
Estimating the term…
Abstract
A substrate processing apparatus capable of locally controlling a plasma intensity and improving thin film properties and thickness uniformity includes: a power supply unit, a processing unit electrically connected to the power supply unit, and a substrate support unit below the processing unit, wherein the substrate support unit includes a first ground electrode and a second ground electrode.
Claims20
A substrate processing apparatus comprising:
- a power supply unit;
- a processing unit electrically connected to the power supply unit;
- and
- a substrate support unit below the processing unit;
- wherein the substrate support unit comprises a first ground electrode, a second ground electrode, and a third ground electrode, and
- wherein the third ground electrode comprises a center electrode arranged in the center of the substrate supporting unit, wherein the first ground electrode comprises a first ring electrode surrounding the center electrode, and wherein the second ground electrode comprises a second ring electrode surrounding the first ring electrode.
3 more elements
A substrate processing apparatus comprising:
- a power supply unit;
- a processing unit electrically connected to the power supply unit;
- and
- a substrate support unit below the processing unit;
- wherein the substrate support unit comprises a first ground electrode, and a second ground electrode,
- wherein the first ground electrode comprises a first mesh ground electrode, and
- the second ground electrode comprises a second mesh ground electrode,
- wherein the first mesh ground electrode and the second mesh ground electrode have different mesh densities.
5 more elements
A substrate processing apparatus comprising:
- a power supply unit;
- a processing unit electrically connected to the power supply unit;
- and
- a substrate support unit below the processing unit,
- wherein the substrate support unit comprises a first ground electrode and a second ground electrode,
- wherein the substrate support unit further comprises:
- a first heating unit below the first ground electrode;
- and
- a second heating unit below the second ground electrode,
- wherein the first heating unit and the second heating unit are independently controlled.
7 more elements
Dependencies are inferred from the claim text.