Dynamic processing chamber baffle

A semiconductor processing system comprising:

• a chamber body comprising sidewalls and a base, the chamber body defining a processing region;
• a substrate support extending through the base of the chamber body, wherein the substrate support is configured to support a substrate within the processing region;
• a faceplate defining a plurality of apertures through the faceplate, wherein the faceplate defines the processing region from above;
• a pumping ring extending about the processing region and providing an exhaust path from the processing region;
• and
• a baffle extending about the substrate support, the baffle translatable between a first position in which the baffle is retracted about the substrate support and a second position in which the baffle is extended into the processing region.

A method of semiconductor processing comprising:

• delivering a deposition precursor into a processing region of a semiconductor processing chamber;
• depositing a layer of material on a substrate housed in the processing region of the semiconductor processing chamber, wherein the processing region is maintained at a first pressure greater than or about 100 Torr during the depositing;
• extending a baffle within the processing region, wherein the baffle modifies a flow path within the processing region;
• forming a plasma of a treatment precursor within the processing region of the semiconductor processing chamber, wherein the processing region is maintained at a second pressure less than or about 20 Torr during the forming;
• and
• treating the layer of material deposited on the substrate with plasma effluents of the treatment precursor.