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US 12,119,207 B2Granted
Apparatus for plasma processing
AssigneeTokyo Electron Limited
InventorsMerritt Funk, Barton Lane
Life of this patent
Estimating the term…
Abstract
An apparatus for plasma processing includes a first resonating structure and a second resonating structure. The first resonating structure is coupled to a first RF generator through a first matching circuit. The second resonating structure surrounds the first resonating structure. The second resonating structure is coupled to a second RF generator through a second matching circuit.
Claims20
An apparatus for plasma processing, the apparatus comprising:
- a first resonating structure, the first resonating structure being coupled to a first RF generator through a first matching circuit;
- and
- a second resonating structure surrounding the first resonating structure, the second resonating structure being coupled to a second RF generator through a second matching circuit.
An apparatus for plasma processing, the apparatus comprising:
- a first resonating structure, the first resonating structure creating a first zone for a first plasma influenced by the first resonating structure;
- and
- a second resonating structure, the second resonating structure creating a second zone for a second plasma influenced by the second resonating structure, wherein the second zone surrounds the first zone.
An apparatus for plasma processing, the apparatus comprising:
- a first cavity having a first resonant frequency, the first cavity being coupled through a first capacitor to a conductive plane;
- and
- a second cavity having a second resonant frequency, the second cavity being surrounded by the first cavity, the second cavity being coupled through a second capacitor to the conductive plane.
Dependencies are inferred from the claim text.