Memory device
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsQiang Tang, Chunyuan Hou
Life of this patent
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Abstract
A memory device includes a first substrate, a first memory array, a second substrate, and at least one first vertical transistor. The first memory array is disposed on the first substrate. The first memory array includes at least one first word line structure. The first memory array is disposed between the first substrate and the second substrate in a vertical direction. The first vertical transistor is electrically connected with the first word line structure. At least a part of the at least one first vertical transistor is disposed in the second substrate.
Claims20
A memory device, comprising:
- a substrate comprising a semiconductor substrate;
- a first memory array on a surface of the substrate, wherein the first memory array comprises at least one first word line structure;
- and
- at least one first vertical transistor above the first memory array and connected with the at least one first word line structure, wherein at least a part of the at least one first vertical transistor is disposed in the substrate.
A memory device, comprising:
- a substrate comprising a semiconductor substrate;
- a first memory array on a surface of the substrate, wherein the first memory array comprises at least one first word line structure;
- at least one first vertical transistor connected with the at least one first word line structure, wherein at least a part of the at least one first vertical transistor is disposed in the substrate;
- a second memory array bonded on another surface of the substrate, wherein the second memory array comprises at least one second word line structure;
- and
- at least one second vertical transistor connected with the at least one second word line structure, wherein at least a part of the at least one second vertical transistor is disposed in the substrate.
A memory device, comprising:
- a substrate comprising a semiconductor substrate;
- a first memory array on a surface of the substrate, wherein the first memory array comprises at least one first word line structure;
- at least one first vertical transistor connected with the at least one first word line structure, wherein at least a part of the at least one first vertical transistor is disposed in the substrate;
- another substrate, wherein the first memory array is disposed on a surface of the another substrate;
- a second memory array on another surface of the another substrate, wherein the second memory array comprises at least one second word line structure;
- and
- at least one second vertical transistor connected with the at least one second word line structure, wherein at least a part of the at least one second vertical transistor is disposed in the substrate.
Dependencies are inferred from the claim text.