Non-volatile memory with zoned control for limiting programming for different groups of non-volatile memory cells

A method of operating non-volatile storage, comprising:

• programming a first subset of a first group of non-volatile memory cells to a first set of data states by applying doses of a program signal to the first group of non-volatile memory cells until the first subset of the first group of non-volatile memory cells successfully reach the first set of data states;
• after programming the first subset of the first group of non-volatile memory cells to the first set of data states, programming a second subset of the first group of non-volatile memory cells to an additional data state by applying no more than a first number of doses of the program signal to the first group of non-volatile memory cells;
• programming a first subset of a second group of non-volatile memory cells to the first set of data states by applying doses of the program signal to the second group of non-volatile memory cells until the first subset of the second group of non-volatile memory cells successfully reach the first set of data states;
• and
• after programming the first subset of the second group of non-volatile memory cells to the first set of data states, programming a second subset of the second group of non-volatile memory cells to the additional data state by applying no more than a second number of doses of the program signal to the second group of non-volatile memory cells, the first number of doses is different than the second number of doses;
• wherein the first group of non-volatile memory cells and the second group of non-volatile memory cells are part of a block of non-volatile memory cells that comprises sub-blocks including a first outer sub-block, a second outer sub-block and inner sub-blocks between the first outer sub-block and the second outer sub-block, all of the sub-blocks comprise tiers including an upper tier and a lower tier, all of the non-volatile memory cells of the first group of non-volatile memory cells are in one or more tiers of the sub-blocks other than the upper tier of the first outer sub-block and the upper tier of the second outer sub-block, all of the non-volatile memory cells of the second group of non-volatile memory cells are in the upper tier of the first outer sub-block and the first number of doses is less than the second number of doses.