Managing compensation for cell-to-cell coupling and lateral migration in memory devices based on a sensitivity metric

A method comprising:

• determining, by a processing device operatively coupled with a memory device comprising a plurality of memory cells each associated with a corresponding wordline of a plurality of wordlines located on a die of the memory device, for a wordline of the plurality of wordlines, a respective value of a sensitivity metric that reflects a sensitivity of a threshold voltage of a memory cell associated with the wordline to a change in a threshold voltage of an adjacent memory cell;
• determining, for the wordline, that the respective value of the sensitivity metric satisfies a threshold criterion;
• responsive to determining that the respective value of the sensitivity metric satisfies the threshold criterion, associating the wordline with a first wordline group, wherein the first wordline group comprises one or more wordlines, and wherein each wordline of the one or more wordlines is associated with a respective value of the sensitivity metric that satisfies the threshold criterion;
• and
• performing, on a specified memory cell connected to the wordline associated with the first wordline group, a compensatory operation to adjust one or more voltages applied to the specified memory cell.

A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to perform operations comprising:

• determining, for a wordline of a plurality of wordlines, a respective value of a sensitivity metric that reflects a sensitivity of a threshold voltage of a memory cell associated with the wordline to a change in a threshold voltage of an adjacent memory cell;
• determining, for the wordline, that the respective value of the sensitivity metric satisfies a threshold criterion;
• responsive to determining that the respective value of the sensitivity metric satisfies the threshold criterion, associating the wordline with a first wordline group, wherein the first wordline group comprises one or more wordlines, and wherein each wordline of the one or more wordlines is associated with a respective value of the sensitivity metric that satisfies the threshold criterion;
• storing, on a memory device, a record referencing the one or more wordlines associated with the first wordline group, wherein the record indicates, for each wordline in the first wordline group, a corresponding location on a die of the memory device;
• and
• performing, on a specified memory cell connected to the wordline associated with the first wordline group, a compensatory operation to adjust one or more voltages applied to the specified memory cell.