Memory array reset read operation
OwnerJeremy Binfet, Mark Helm +2inventors
InventorsJeremy Binfet, Mark Helm, William Filipiak, Mark Hawes
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Abstract
Systems, devices, and methods related to reset read are described. A reset read may be employed to initiate a transition of a portion of memory array into a first state or maintain a portion of memory array in a first state, such as a transient state. A reset read may provide a highly-parallelized, energy-efficient option to ensure memory blocks are in the first state. Various modes of reset read may be configured according to different input.
Claims20
An apparatus, comprising:
- a memory device;
- and
- a controller coupled with the memory device and configured to cause the apparatus to:
- identify a command to perform a reset read operation for setting at least one portion of a memory array to a transient state;
- identify the at least one portion of the memory array based at least in part on the command;
- and
- execute the reset read operation on the at least one portion of the memory array based at least in part on identifying the at least one portion of the memory array, wherein executing the reset read operation comprises performing a read recovery part of a read operation,
- and wherein the transient state of memory cells of the at least one portion of the memory array that includes retaining a word line to a channel potential difference of the memory cells at a level that is lower than a voltage of a source, a drain, a bit line, or a combination thereof of the memory cells after executing the reset read operation.
A non-transitory computer-readable medium storing code comprising instructions which, when executed by a processor of an electronic device, cause the electronic device to:
- identify a command to perform a reset read operation for setting at least one portion of a memory array into a transient first state;
- identify the at least one portion of the memory array based at least in part on the part on the command;
- and
- execute the reset read operation on the at least one portion of the memory array based at least in part on identifying the at least one portion of the memory array, wherein executing the reset read operation comprises performing a read recovery part of a read operation,
- and wherein the transient state of memory cells of the at least one portion of the memory array that includes retaining a word line to a channel potential difference of the memory cells at a level that is lower than a voltage of a source, a drain, a bit line, or a combination thereof of the memory cells after execution of the reset read operation.
A method, comprising:
- identifying a command to perform a reset read operation for setting at least one portion of a memory array into a transient state;
- identifying the at least one portion of the memory array based at least in part on the part on the command;
- and
- executing the reset read operation on the at least one portion of the memory array based at least in part on identifying the at least one portion of the memory array, wherein executing the reset read operation comprises performing a read recovery part of a read operation,
- and wherein the transient state of memory cells of the at least one portion of the memory array that includes retaining a word line to a channel potential difference of the memory cells at a level that is lower than a voltage of a source, a drain, a bit line, or a combination thereof of the memory cells after execution of the reset read operation.
Dependencies are inferred from the claim text.