Back to results
US 12,118,210 B2Granted
Using bad blocks for system data in memory
AssigneeMicron Technology, Inc.
InventorsKok Hua Tan, Yong Kiang Chua, Chee Hock Ngo
Life of this patent
Estimating the term…
Abstract
A memory component has a block of memory cells that has been designated as a bad block. A processing device included in the memory component identifies a functional page of memory cells in the bad block, and programs system data to the identified functional page of memory cells in the bad block.
Claims17
A system, comprising:
- a memory component having a plurality of dies, including a first die having a first block of memory cells designated as a first bad block;
- and
- a processing device, included in the memory component, to:
- identify, responsive to an error detection operation performed on placeholder data programmed to a number of pages of memory cells in the first bad block of the first die determining there are no errors in the placeholder data programmed to the number of pages of memory cells, the number of pages of memory cells as functional pages of memory cells in the first bad block of the first die;
- program system data to the identified functional pages of memory cells in the first bad block of the first die;
- if the number of pages of memory cells identified as functional pages of memory cells in the first bad block of the first die does not meet or exceed a particular number of pages:
- identify, responsive to an error detection operation performed on placeholder data programmed to a number of pages of memory cells in a second block of memory cells of the first die designated as a second bad block determining there are no errors in the placeholder data programmed to the number of pages of memory cells in the second bad block of the first die, the number of pages of memory cells in the second bad block of the first die as functional pages of memory cells in the second bad block of the first die;
- and
- program system data to the identified functional pages of memory cells in the second bad block of the first die;
- and
- if the number of pages of memory cells identified as functional pages of memory cells in the first bad block of the first die meets or exceeds the particular number of pages:
- identify, responsive to an error detection operation performed on placeholder data programmed to a number of pages of memory cells in a third block of memory cells of a second die of the memory component designated as a third bad block determining there are no errors in the placeholder data programmed to the number of pages of memory cells in the third bad block of the second die, the number of pages of memory cells in the third bad block of the second die as functional pages of memory cells in the third bad block of the second die;
- and
- program system data to the identified functional pages of memory cells in the third bad block of the second die.
11 more elements
A method, comprising:
- identifying, responsive to an error detection operation performed on placeholder data programmed to a number of pages of memory cells in a first block of memory cells in a first die of a memory component of a memory sub-system designated as a first bad block determining there are no errors in the placeholder data programmed to the number of pages of memory cells, the number of pages of memory cells as functional pages of memory cells in the first bad block of the first die;
- storing system data in the identified functional pages of memory cells in the first bad block of the first die;
- in response to determining the number of pages of memory cells identified as functional pages of memory cells in the first bad block of the first die does not meet or exceed a first particular number of pages:
- identifying, responsive to an error detection operation performed on placeholder data programmed to a number of pages of memory cells in a second block of memory cells in the first die designated as a second bad block determining there are no errors in the placeholder data programmed to the number of pages of memory cells in the second bad block of the first die, the number of pages of memory cells in the second bad block of the first die as functional pages of memory cells in the second bad block of the first die;
- and
- programming system data to the identified functional pages of memory cells in the second bad block of the first die;
- and
- in response to determining the number of pages of memory cells identified as functional pages of memory cells in the first bad block of the first die meets or exceeds the first particular number of pages:
- identifying, responsive to an error detection operation performed on placeholder data programmed to a number of pages of memory cells in a third block of memory cells in a second die of the memory component designated as a third bad block determining there are no errors in the placeholder data programmed to the number of pages of memory cells in the third bad block of the second die, the number of pages of memory cells in the third bad block of the second die as functional pages of memory cells in the third bad block of the second die;
- and
- programming system data to the identified functional pages of memory cells in the third bad block of the second die;
- locating, in the first bad block of the first die, the identified functional pages of memory cells in the first bad block of the first die having the system data stored therein;
- and
- sensing the system data stored in the located pages of memory cells in the first bad block of the first die.
11 more elements
A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to:
- identify, responsive to an error detection operation performed on placeholder data programmed to a number of pages of memory cells in a first block of memory cells in a first die of a memory component of a memory sub-system designated as a first bad block determining there are no errors in the placeholder data programmed to the number of pages of memory cells, the number of pages of memory cells as functional pages of memory cells in the first bad block of the first die;
- program system data to the identified functional pages of memory cells in the first bad block of the first die;
- if the number of pages of memory cells identified as functional pages of memory cells in the first bad block of the first die does not meet or exceed a particular number of pages:
- identify, responsive to an error detection operation performed on placeholder data programmed to a number of pages of memory cells in a second block of memory cells in the first die designated as a second bad block determining there are no errors in the placeholder data programmed to the number of pages of memory cells in the second bad block of the first die, the number of pages of memory cells in the second bad block of the first die as functional pages of memory cells in the second bad block of the first die;
- and
- program system data to the identified functional pages of memory cells in the second bad block of the first die;
- and
- if the number of pages of memory cells identified as functional pages of memory cells in the first bad block of the first die meets or exceeds the particular number of pages:
- identify, responsive to an error detection operation performed on placeholder data programmed to a number of pages of memory cells in a third block of memory cells in a second die of the memory component designated as a third bad block determining there are no errors in the placeholder data programmed to the number of pages of memory cells in the third bad block of the second die, the number of pages of memory cells in the third bad block of the second die as functional pages of memory cells in the third bad block of the second die;
- and
- program system data to the identified functional pages of memory cells in the third bad block of the second die;
- locate the identified functional pages of memory cells in the first bad block of the first die to which the system data has been programmed;
- and
- sense the system data upon locating the identified functional pages of memory cells in the first bad block of the first die.
11 more elements
Dependencies are inferred from the claim text.