Method for measuring critical dimension
AssigneeNanya Technology Corporation
InventorChia-Chung Lin
Life of this patent
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Abstract
The present application discloses a method for measuring critical dimension. The method for measuring critical dimension includes providing a substrate; forming a resist layer over the substrate; monitoring a volatile byproduct evolved from the resist layer to obtain a first amount of the volatile byproduct; exposing the resist layer to a radiation source; heating the resist layer; monitoring the volatile byproduct evolved from the resist layer to obtain a second amount of the volatile byproduct; and deducting the critical dimension according to a difference between the first amount of the volatile byproduct and the second amount of the volatile byproduct.
Claims10
A method for measuring critical dimension, comprising:
- providing a substrate;
- forming a resist layer over the substrate, wherein the resist layer comprises a solvent, a nonactivated polymer resin, a photoacid generator, and a photosensitizer generator;
- exposing the resist layer to a radiation source in a first wavelength;
- exposing the resist layer to a radiation source in a second wavelength different from the first wavelength;
- heating the resist layer;
- continuously monitoring a volatile byproduct evolved from the resist layer from a first time point after forming the resist layer over the substrate to a second time point after heating the resist layer, to obtain a concentration curve of the volatile byproduct;
- and
- deducting the critical dimension according to an integration of the concentration curve between the first time point and the second time point;
- wherein the photosensitizer generator is sensitive to the second wavelength and the photoacid generator is not sensitive to the second wavelength.
Dependencies are inferred from the claim text.