Photoelectric conversion element, method of manufacturing the same, solid state image sensor, electronic device, and solar cell

A solid state image sensor, comprising:

• a photoelectric conversion element comprising:
• a first electrode configured to collect holes;
• a second electrode configured to collect electrons;
• a first photoelectric conversion layer between the first electrode and the second electrode;
• a second photoelectric conversion layer between the first photoelectric conversion layer and the first electrode;
• and
• a third photoelectric conversion layer between the first photoelectric conversion layer and the second electrode, wherein
• each of the first photoelectric conversion layer, second photoelectric conversion layer, and the third photoelectric conversion layer comprises an electron donating material and an electron accepting material,
• the second photoelectric conversion layer is doped with an electron accepting impurity, different from the electron accepting material, exhibiting an electron accepting property at an impurity density of at least 1e16/cm3, and
• the third photoelectric conversion layer is doped with an electron donating impurity, different from the electron donating material, exhibiting an electron donating property at an impurity density of at least 1e16/cm3.