Semiconductor device, integrated circuit and method of manufacturing the same

An integrated circuit, comprising:

• a logic region disposed on a substrate;
• and
• an embedded memory region disposed over the substrate, comprising:
• a thin-film transistor (TFT) disposed over the substrate, the TFT comprising:
• a gate electrode;
• a gate dielectric layer disposed over the gate electrode;
• source/drain electrodes disposed above the gate dielectric layer and contacting the gate dielectric layer;
• and
• an active layer disposed above the gate electrode;
• a magnetoresistive random-access memory (MRAM) cell electrically coupled to the TFT;
• and
• a protection layer disposed between the TFT and the MRAM cell and electrically connects the MRAM cell to the TFT, wherein the protection layer is conformal to the gate dielectric layer and the source/drain electrodes.

A method of manufacturing a semiconductor device, comprising:

• disposing a transistor on a substrate;
• disposing an inter-layer dielectric (ILD) layer over the transistor;
• disposing an IMD layer over the ILD layer;
• disposing a TFT over the IMD layer;
• and
• disposing a protection layer over the TFT, wherein the protection layer includes oxide semiconductor material.