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US 12,114,510 B2Granted
SOT MRAM having dielectric interfacial layer and method forming same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWilman Tsai, MingYuan Song, Shy-Jay Lin
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Abstract
A device includes a spin orbit coupling layer and a Magnetic Tunnel Junction (MTJ) stack. The MTJ stack includes a dielectric layer over the spin orbit coupling layer, a free layer over the dielectric layer, a tunnel barrier layer over the free laver, and a reference layer over the tunnel barrier layer. The spin orbit coupling layer extends beyond edges of the MTJ stack in a first direction and a second direction opposite to the first direction.
Claims20
A device comprising:
- a dielectric seed layer having a crystalline structure;
- a spin orbit coupling layer over the dielectric seed layer;
- and
- a Magnetic Tunnel Junction (MTJ) stack comprising:
- a dielectric layer over the spin orbit coupling layer;
- a free layer over the dielectric layer;
- a tunnel barrier layer over the free layer;
- and
- a reference layer over the tunnel barrier layer, wherein the spin orbit coupling layer extends beyond edges of the MTJ stack in a first direction and a second direction opposite to the first direction.
6 more elements
A device comprising:
- a dielectric seed layer having a crystalline structure;
- a metal layer over and contacting the dielectric seed layer;
- a Magnetic Tunnel Junction (MTJ) over the metal layer, wherein the MTJ comprises:
- a dielectric layer over the metal layer;
- a free layer over the dielectric layer, wherein the dielectric layer has a thickness configured to allow spin polarized carriers in the metal layer to flow through the dielectric layer into the free layer;
- a tunnel barrier layer over the free layer;
- and
- a reference layer over the tunnel barrier layer;
- and
- a dielectric capping layer on sidewalls of the MTJ, wherein the dielectric capping layer contacts edges of the dielectric layer, and extends on a top surface of the metal layer.
7 more elements
A device comprising:
- a first dielectric layer having a crystalline structure;
- a metal layer over and contacting the first dielectric layer, wherein first edges of the first dielectric layer are vertically aligned to respective second edges of the metal layer;
- a second dielectric layer over the metal layer, wherein the second dielectric layer has a thickness thin enough to allow spin polarized carriers to flow through;
- a free layer over the second dielectric layer;
- a tunnel barrier layer over the free layer;
- and
- a reference layer over the tunnel barrier layer.
4 more elements
Dependencies are inferred from the claim text.