Semiconductor storage device

A semiconductor storage device, comprising:

• a first conductive layer including a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer stacked in order in a first direction;
• a stack disposed above the first conductive layer and including a plurality of second conductive layers stacked in the first direction;
• and
• a columnar body that extends in the first direction through the stack, and includes a fourth semiconductor layer and a charge storage film disposed between the plurality of second conductive layers and the fourth semiconductor layer,
• the first conductive layer is in contact with the fourth semiconductor layer,
• the fourth semiconductor layer includes a first region in which a concentration of an n-type impurity is higher than a concentration of a p-type impurity, a second region in which a concentration of the p-type impurity is higher than a concentration of the n-type impurity, and a third region in contact with the second semiconductor layer and disposed closer to the first region than the second region in the first direction,
• the second semiconductor layer includes a first portion, a second portion, and a third portion,
• the first portion contains the n-type impurity,
• the second portion contains the p-type impurity,
• the third portion contains a carbon element, and
• at least a portion of the second portion is disposed between the first portion and the fourth semiconductor layer, and
• at least a portion of the third portion is disposed between the first portion and the second portion.