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US 12,114,498 B2Granted
Three-dimensional memory devices
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsLinchun Wu, Kun Zhang, Wenxi Zhou, Zhiliang Xia
Life of this patent
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Abstract
Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a stop layer, a polysilicon layer, a memory stack including interleaved stack conductive layers and stack dielectric layers, and a plurality of channel structures each extending vertically through the memory stack and the polysilicon layer, stopping at the stop layer.
Claims17
A three-dimensional (3D) memory device, comprising:
- a stop layer comprising a dielectric material;
- a polysilicon layer at a first side of the stop layer and being in contact with the dielectric material of the stop layer;
- a dielectric layer isolated from the polysilicon layer by the stop layer and in contact with a second side of the stop layer;
- a source contact structure extending vertically through the dielectric layer and the stop layer from the second side of the stop layer, and extending into the polysilicon layer and without penetrating through the polysilicon layer;
- a memory stack comprising interleaved stack conductive layers and stack dielectric layers;
- and
- a plurality of channel structures each extending vertically through the memory stack and the polysilicon layer, stopping at the stop layer.
4 more elements
Dependencies are inferred from the claim text.