Semiconductor device and method of forming the same
AssigneeMicron Technology, Inc.
InventorsNaoyoshi Kobayashi, Tsuyoshi Tomoyama
Life of this patent
Estimating the term…
Abstract
An apparatus includes a substrate; a memory cell region provided over the substrate; a peripheral region provided over the substrate and adjacent to the memory cell region; and a plurality of word-lines extending in parallel across the memory cell region and the peripheral region; a first insulating film covering top surfaces of the plurality of word-lines in each of the memory cell region and the peripheral region and covering side surfaces of upper portions of the plurality of word-lines in the peripheral region without covering side surfaces of the upper portions of the plurality of word-lines in the memory cell region.
Claims4
An apparatus comprising:
- a substrate;
- a memory cell region provided over the substrate;
- a peripheral region provided over the substrate and adjacent to the memory cell region;
- a plurality of word-lines extending in parallel across the memory cell region and the peripheral region;
- a first insulating film covering top surfaces of the plurality of word-lines in each of the memory cell region and the peripheral region and covering side surfaces of upper portions of the plurality of word-lines in the peripheral region without covering side surfaces of the upper portions of the plurality of word-lines in the memory cell region;
- and
- a third insulating film between the first insulating film and the top surfaces of the plurality of word-lines in the memory cell region.
An apparatus comprising:
- a substrate;
- a memory cell region provided over the substrate;
- a peripheral region provided over the substrate and adjacent to the memory cell region;
- a plurality of word-lines extending in parallel across the memory cell region and the peripheral region;
- a first insulating film covering top surfaces of the plurality of word-lines in each of the memory cell region and the peripheral region and covering side surfaces of upper portions of the plurality of word-lines in the peripheral region without covering side surfaces of the upper portions of the plurality of word-lines in the memory cell region;
- and
- a second insulating film over the first insulating film in the peripheral region;
- and
- a plurality of word-line-contacts each connected to a corresponding one of the plurality of word-lines passing through the first and second insulating films in the peripheral region;
- wherein each of the plurality of word-line contacts including an upper portion surrounded by the second insulating film and a lower portion surrounded by the first insulating film, and
- wherein the lower portion has a smaller diameter than that of the upper portion.
Dependencies are inferred from the claim text.