Fabrication method of a memory and the memory

A fabrication method of a memory, comprising:

• providing a substrate, the substrate comprising a central region and an edge region connected to the central region, a first contact structure being formed in the edge region, and the first contact structure being electrically connected to a wordline structure in the substrate;
• forming a second contact structure on the edge region, the second contact structure being electrically connected to the first contact structure;
• forming a capacitor structure on the central region, the capacitor structure being electrically connected to the wordline structure;
• forming a third contact structure on the second contact structure, the third contact structure being electrically connected to the second contact structure;
• and
• forming a transistor structure on the capacitor structure and the third contact structure, the transistor structure being electrically connected to the third contact structure, and an orthographic projection of the transistor structure on the substrate being at least partially coincident with orthographic projections of the capacitor structure and the third contact structure on the substrate.