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US 12,114,437 B2Granted
Wiring structure, method for manufacturing same, and semiconductor package
AssigneeResonac Corporation
InventorsMasaya Toba, Kazuyuki Mitsukura
Life of this patent
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Abstract
Disclosed is a method for manufacturing a wiring structure including a step of forming a wiring on an insulating resin layer. The step of forming the wiring includes: forming a modified region including pores in a surface layer of the insulating resin layer by treating a surface of the insulating resin layer with a treatment method including surface modification; forming a seed layer on the surface of the insulating resin layer by sputtering; and forming the wiring on the seed layer by electrolytic copper plating.
Claims9
A wiring structure, comprising:
- an insulating resin layer;
- a seed layer provided on the insulating resin layer and including one or more metal layers;
- and a copper wiring provided on the seed layer, wherein a modified region including pores is formed in a surface layer of the insulating resin layer on the seed layer side, and a part of metal forming the seed layer penetrates into the pores, and wherein the surface of the insulating resin layer including the modified region has a surface roughness Ra of 70 nm or less.
A wiring structure, comprising:
- an insulating resin layer;
- a seed layer provided on the insulating resin layer and including one or more metal layers;
- and a copper wiring provided on the seed layer, wherein a modified region including pores is formed in a surface layer of the insulating resin layer on the seed layer side, and a part of metal forming the seed layer penetrates into the pores, and wherein a depth of the modified region is 50 nm or more and 200 nm or less.
Dependencies are inferred from the claim text.