Device incorporating an IR signal transmissive region

A semiconductor device having a plurality of layers deposited on a substrate and extending in at least one lateral aspect defined by a lateral axis thereof, comprising:

• at least one electromagnetic (EM) radiation-absorbing layer deposited on a first layer surface and comprising a discontinuous layer of at least one particle structure comprising a deposited material;
• wherein the at least one particle structure of the at least one EM radiation-absorbing layer facilitates absorption of EM radiation therein in at least a part of at least one of a visible spectrum and an ultraviolet (UV) spectrum while substantially allowing transmission of EM radiation therein in at least a part of at least one of an infrared (IR) spectrum and a near infrared (NIR) spectrum.