Dual emission LED chip
AssigneeNANO-X GmbH
InventorsDu Jin Park, Pil Kuk Jang
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AssigneeNANO-X GmbH
InventorsDu Jin Park, Pil Kuk Jang
Estimating the term…
Proposed is a dual emission LED chip that emits light to the upper and lower sides of a PN junction, wherein the duel emission LED chip uses the electroluminescent effect of the PN junction including a P layer and an N layer provided below the P layer, and characterized in that the dual emission LED chip emits light in the upward direction of the P layer and the downward direction of the N layer. The dual emission chip can be applied as a single chip to a field requiring dual emission, thereby enabling miniaturization of applied equipment, and increases power efficiency, thereby reducing manufacturing costs. In addition, as the dual emission LED chip can be manufactured through a batch process, a separate packaging process is not required.
A dual emission light-emitting diode (LED) chip comprising an LED chip which uses an electroluminescence effect of a P-N junction including a P-layer (P) and an N-layer (N) below the P-layer (P),
A dual emission light-emitting diode (LED) chip comprising an LED chip which uses an electroluminescence effect of a P-N junction including a P-layer (P) and an N-layer (N) below the P-layer (P), wherein light is emitted in each of an upward direction of the P-layer (P) and a downward direction of the N-layer (N), wherein a P-direction insulating part formed as a film having a predetermined thickness is provided on an outer surface of the P-N junction and an edge of the upper surface of the P-layer (P), and wherein an N-direction insulating part formed as a film having a predetermined thickness is provided on a lower surface of the P-direction insulating part and an edge of the lower surface of the N-layer (N).
Dependencies are inferred from the claim text.