Optically controlled field effect transistor
AssigneeThe United States of America as represented by the Secretary of the Air Force
InventorJoseph Neil Merrett
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Abstract
A semiconductor structure configured to implement an optically controlled field effect transistor (FET). In one embodiment, a normally-off, optically controlled FET is realized as a semiconductor structure comprising various regions configured to implement a voltage controlled, normally on, high voltage FET region having integrated thereon a photoconductive region configured to reduce a gate-to-source voltage of the FET in response to light incident upon the photoconductive region so as to turn the FET on.
Claims12
An optically controlled field effect transistor (FET), comprising:
- a semiconductor structure configured to form a voltage controlled, normally on, high voltage FET;
- and
- a photoconductive region integrated on the semiconductor structure and configured to reduce a gate-to-source voltage of the FET in response to light incident upon the photoconductive region.
Dependencies are inferred from the claim text.