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US 12,113,137 B2Granted
SPAD-type photodiode
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsFrançois Ayel, Olivier Saxod, Norbert Moussy
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Abstract
A SPAD-type photodiode comprising a depletion area in a first portion of a semiconductor substrate of a first conductivity type and further comprising a gate electrically-insulated from the substrate, extending into the substrate from an upper surface of the substrate, and separating the first portion of the substrate from a second portion. The photodiode further comprises a first region of the second conductivity type extending from the upper surface of the substrate into the second portion.
Claims12
An apparatus, comprising:
- a SPAD-type photodiode comprising:
- a depletion area, in which a photogenerated electric charge can be injected to trigger an avalanche of the SPAD-type photodiode, in a first portion of a semiconductor substrate of a first conductivity type;
- a gate electrically insulated from the substrate, extending into the substrate from an upper surface of the substrate down to a depth smaller than the thickness of the substrate, and separating the first portion of the substrate from a second portion;
- and
- a first region of the second conductivity type extending from the upper surface of the substrate into the second portion,
- wherein the second portion of the substrate does not have a depletion area in which a photogenerated electric charge can be injected to trigger an avalanche of the SPAD-type photodiode.
3 more elements
Dependencies are inferred from the claim text.