Strain enhanced SiC power semiconductor device and method of manufacturing

A method of manufacturing a SiC transistor device comprising:

• forming a SiC semiconductor substrate having a top surface and a bottom surface;
• forming epitaxially a SiC epitaxial layer on the top surface of the SiC semiconductor substrate, the SiC epitaxial layer having a top surface;
• forming a source structure in the top surface of the SiC epitaxial layer, the source structure having a top surface;
• forming a source contact structure electrically coupled to the top surface of the source structure;
• forming a gate structure on the top surface of the SiC epitaxial layer, wherein the gate structure includes a gate dielectric and a metal gate;
• forming a first backside metal contact on the bottom surface of the SiC semiconductor substrate;
• forming a stress inducing layer on the first backside metal contact;
• structuring the stress inducing layer;
• and
• forming a second backside metal contact on the structured stress inducing layer.

A method of manufacturing a SiC transistor device comprising:

• forming a SiC semiconductor substrate having a top surface and a bottom surface;
• forming epitaxially a SiC epitaxial layer on the top surface of the SiC semiconductor substrate, the SiC epitaxial layer having a top surface;
• forming a source structure in the top surface of the SiC epitaxial layer, the source structure having a top surface;
• forming an electrically insulating first stress inducing layer on the top surface of the SiC epitaxial layer;
• structuring the electrically insulating first stress inducing layer;
• forming a source contact structure electrically coupled to the top surface of the source structure;
• forming a gate structure on the top surface of the SiC epitaxial layer, wherein the gate structure includes a metal gate;
• forming a first backside metal contact on the bottom surface of the SiC semiconductor substrate;
• forming a second stress inducing layer on the first backside metal contact;
• structuring the second stress inducing layer;
• and
• forming a second backside metal contact on the structured second stress inducing layer.