Transistor and methods of forming integrated circuitry

A transistor comprising:

• a top source/drain region having a first conductivity-increasing dopant therein at a concentration rendering semiconductor material of the top source/drain region to be conductive;
• a bottom source/drain region having a second conductivity-increasing dopant therein at a concentration rendering semiconductor material of the bottom source/drain region to be conductive;
• a channel region vertically between the top and bottom source/drain regions;
• a gate operatively laterally adjacent the channel region;
• an upper portion of the channel region adjacent the top source/drain region having a non-conductive concentration of the first conductivity-increasing dopant therein;
• a lower portion of the channel region adjacent the bottom source/drain region having a non-conductive concentration of the second conductivity increasing dopant therein, the upper portion being vertically thicker than the lower portion;
• and
• an intervening region of the channel region vertically between the upper and lower portions of the channel regions, the intervening region being thicker than the upper portion of the channel region.

A transistor comprising:

• a top source/drain region having a first conductivity-increasing dopant therein at a concentration rendering semiconductor material of the top source/drain region to be conductive;
• a bottom source/drain region having a second conductivity-increasing dopant therein at a concentration rendering semiconductor material of the bottom source/drain region to be conductive;
• a channel region vertically between the top and bottom source/drain regions;
• a gate operatively laterally adjacent the channel region;
• an upper portion of the channel region adjacent the top source/drain region having a non-conductive concentration of the first conductivity-increasing dopant therein;
• a lower portion of the channel region adjacent the bottom source/drain region having a non-conductive concentration of the second conductivity increasing dopant therein, the upper portion being vertically thicker than the lower portion;
• and
• an intervening region of the channel region vertically between the upper and lower portions of the channel regions, the intervening region being thicker than the lower portion of the channel region.