Semiconductor structure including gate structure including barrier layer and conductive layer and manufacturing method thereof

A method of manufacturing a semiconductor structure, comprising:

• providing a substrate;
• forming at least one gate trench in the substrate;
• forming, in the at least one gate trench, a barrier layer at least covering an inner wall of the at least one gate trench;
• removing chloride ions remaining in the barrier layer by a plasma ion implantation to form a first barrier layer and a second barrier layer by the barrier layer, wherein the second barrier layer is located on an inner side of the first barrier layer, and a concentration of nitrogen ions in the second barrier layer is greater than a concentration of the nitrogen ions in the first barrier layer;
• and
• forming, a gate structure comprising the barrier layer and a conductive layer covering a surface of the barrier layer, in the at least one gate trench.