Integrated circuit device

An integrated circuit device comprising:

• a fin-type active region extending along a first horizontal direction on a substrate;
• a plurality of gate structures extending along a second horizontal direction crossing the first horizontal direction on the fin-type active regions;
• a source/drain region on the fin-type active region between a pair of gate structures among the gate structures, wherein the pair of gate structures are adjacent to each other;
• a source/drain contact that extends along a vertical direction on the source/drain region and has opposing sides in the first horizontal direction that are asymmetric;
• and
• an insulation liner on sidewalls of the source/drain contact,
• wherein the source/drain contact comprises a lower contact portion facing the pair of gate structures in the first horizontal direction and an upper contact portion that is integral to the lower contact portion, the upper contact portion comprises a horizontal extension, which extends on an upper corner of a first gate structure of the pair of gate structures and overlaps at least a portion of the first gate structure in the vertical direction,
• wherein the insulation liner comprises a first local region that electrically separates the upper corner of the first gate structure and the horizontal extension of the source/drain contact, and a second local region that is farther from the substrate than the first local region, and
• wherein a thickness of the first local region is greater than that of the second local region.

An integrated circuit device comprising:

• a fin-type active region extending along a first horizontal direction on a substrate;
• a source/drain region on the fin-type active region,
• a pair of nanosheet stacks on a fin top surface of the fin-type active region and spaced apart from each other in the first horizontal direction with the source/drain region therebetween,
• a pair of gate structures comprising a pair of gate lines that surround the pair of nanosheet stacks on the fin-type active region and extend along a second horizontal direction crossing the first horizontal direction and a pair of outer insulation spacers on sidewalls of the pair of gate lines;
• a source/drain contact that extends along a vertical direction on the source/drain region and has opposing sides in the first horizontal direction that are asymmetric;
• and
• an insulation liner on sidewalls of the source/drain contact,
• wherein the source/drain contact comprises a lower contact portion between the pair of gate structures in the first horizontal direction and an upper contact portion extending from the lower contact portion, the upper contact portion comprises a horizontal extension, which extends on an upper corner of a first gate structure of the pair of gate structures and overlaps at least a portion of the first gate structure in the vertical direction,
• the insulation liner comprises a first local region between the upper corner of the first gate structure and the horizontal extension of the source/drain contact and a second local region that is farther from the substrate than the first local region, and a thickness of the first local region is greater than that of the second local region.