Semiconductor device

A semiconductor device, comprising:

• a semiconductor substrate having a first surface and a second surface opposite to the first surface;
• and
• a drift layer of a first conductivity type formed on the semiconductor substrate,
• wherein the semiconductor substrate has first and second active cell regions, and an inactive cell region between the first and second active cell regions,
• wherein each of the first and second active cell regions comprises:
• a trench gate formed on the first surface side;
• a first trench emitter formed adjacent to the trench gate on the first surface side;
• a first hole barrier layer of the first conductivity type formed on upper portion of the drift layer and between the trench gate and the first trench emitter;
• a base layer of a second conductivity type opposite to the first conductivity type formed on upper portion of the first hole barrier layer and in contact with the trench gate;
• an emitter layer of the first conductivity type formed on upper portion of the base layer and in contact with the trench gate;
• and
• a latch-up prevention layer of the second conductivity type formed on upper portion of the first hole barrier layer and in contact with the first trench emitter,
• wherein the inactive cell region comprises:
• a second trench emitter formed adjacent to the trench gate of the first active region on the first surface side;
• and
• a first floating layer of the second conductivity type formed between the trench gate of the first active cell region and the second trench emitter.