Semiconductor structure and method for manufacturing semiconductor structure
AssigneeChangxin Memory Technologies, Inc.
InventorsHongmin Wu, Yu-Sheng Ting
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Abstract
Provided are a semiconductor structure and a method for manufacturing the semiconductor structure. The semiconductor structure includes a substrate in which a capacitor structure is formed, and the capacitor structure includes a lower electrode plate, a dielectric layer, an upper electrode plate and a protective layer. The lower electrode plate is located on the substrate. The dielectric layer covers a surface of the lower electrode plate. The upper electrode plate covers the dielectric layer. The protective layer is formed on a surface of the upper electrode plate parallel to the substrate.
Claims18
A semiconductor structure, comprising:
- a substrate in which a capacitor structure is formed, the capacitor structure comprising:
- a lower electrode plate located on the substrate;
- a dielectric layer covering a surface of the lower electrode plate;
- an upper electrode plate covering the dielectric layer;
- and
- a protective layer formed on a surface, parallel to the substrate, of the upper electrode plate, wherein the protective layer has a doping element, and the doping element reacts with the upper electrode plate to generate the protective layer.
A method for manufacturing a semiconductor structure, comprising:
- providing a substrate, and forming a capacitor structure in the substrate, wherein forming the capacitor structure comprises:
- forming a lower electrode plate on the substrate;
- forming a dielectric layer on a surface of the lower electrode plate;
- forming an upper electrode plate on a surface of the dielectric layer;
- and
- forming a protective layer on a surface, parallel to the substrate, of the upper electrode plate, wherein a doping element reacts with the upper electrode plate to generate the protective layer.
Dependencies are inferred from the claim text.