Manufacturing method of capacitor structure including patterned conductive layer disposed between two electrodes

A manufacturing method of a capacitor structure, comprising:

• forming a capacitor unit on an insulation layer, wherein the capacitor unit comprises:
• a first electrode;
• a second electrode disposed above the first electrode in a vertical direction;
• a dielectric layer disposed between the first electrode and the second electrode in the vertical direction;
• and
• a first patterned conductive layer disposed between the first electrode and the second electrode, wherein the first patterned conductive layer is electrically connected with the first electrode, and the dielectric layer surrounds the first patterned conductive layer in a horizontal direction, wherein the step of forming the capacitor unit comprises:
• forming a stacked structure on the insulation layer, wherein the stacked structure comprises the first electrode, a second patterned conductive layer, and the second electrode;
• removing a part of the second patterned conductive layer by an etching process for forming a gap between the first electrode and the second electrode, wherein the second patterned conductive layer is etched to be a third patterned conductive layer by the etching process;
• forming the dielectric layer in the gap;
• and
• forming an opening after the step of forming the dielectric layer, wherein the opening penetrates through the second electrode in the vertical direction, a part of the third patterned conductive layer is removed by the step of forming the opening for separating the third patterned conductive layer from the second electrode, and the third patterned conductive layer becomes the first patterned conductive layer by the step of forming the opening, wherein the third patterned conductive layer is directly connected with the second electrode before the step of forming the opening.