Method for producing semiconductor capacitors having different capacitance values in a semiconductor substrate

A method for producing semiconductor capacitors having different capacitance values in a semiconductor substrate comprising:

• in a first production phase independently of the semiconductor capacitors to be produced in the semiconductor substrate:
• a hole structure comprising several groups of holes is produced in the semiconductor substrate, which several groups of holes are distributed over the semiconductor substrate and wherein each of the several groups of holes are separated from one another by means of a plurality of identifiable dividing regions, each dividing region having a width which is greater than a spacing of the holes within the several groups of holes, and
• the hole structure is filled with a layer sequence of a dielectric and an electrically conductive layer as an upper electrode of the semiconductor capacitor to be produced, wherein the layer sequence also extends between the holes and several groups of holes and each of the several groups of holes forms a first capacitance and
• in a second production phase depending on the semiconductor capacitors to be produced in said semiconductor substrate:
• a plurality of subregions of said semiconductor substrate are specified, each subregion defining an area in which semiconductor capacitors having identical capacitance values are to be produced, wherein the capacitance values of the semiconductor capacitors of the plurality of subregions differ,
• the layer sequence is structured and a metallization is applied structured or is applied and then structured, wherein the structuring and the application of the metallization are accomplished so that within subregion each the semiconductor capacitors are formed depending on the desired identical capacitance values of the corresponding subregion either in each case by one of a first capacitances or by electric parallel connection of several of the first capacitances and
• the semiconductor capacitors of each subregion are separated by separating the semiconductor substrate along a plurality of dividing lines which run within the plurality of subregions;
• wherein after formation and before the separation of the semiconductor capacitors, the semiconductor substrate is connected to a second semiconductor substrate of lower doping than the semiconductor substrate and a second metallization is applied to the second semiconductor substrate on a back side thereof, so that RC members are obtained by the separation.