Full color light emitting diode structure and method for manufacturing the same

A light emitting diode (LED) structure, comprising:

• a substrate;
• a first semiconductor layer formed on the substrate, the first semiconductor layer comprising a first LED unit and a second LED unit formed therein, wherein the first LED unit and the second LED unit emit light of a first color;
• a second semiconductor layer formed above the first semiconductor layer, the second semiconductor layer comprising a third LED unit formed therein, wherein the third LED unit emits light of a second color different from the first color,
• wherein each of the first LED unit, the second LED unit, and the third LED unit comprises:
• a first doping semiconductor layer;
• a multiple quantum well (MQW) layer formed on the first doping semiconductor layer;
• and
• a second doping semiconductor layer formed on the MQW layer,
• wherein an ion-implanted material is formed in the second doping semiconductor layer, the ion-implanted material of the first LED unit extends to the ion-implanted material of the second LED unit, and each of the first LED unit, the second LED unit, and the third LED unit comprises a light emitting area surrounded by the ion-implanted material in the second doping semiconductor layer;
• a passivation layer covering the ion-implanted material and exposing the light emitting area of the first LED unit, the second LED unit, and the third LED unit;
• an electrode layer formed on the passivation layer;
• and
• a color conversion layer formed on the first LED unit to convert light of the first color to light of a third color different from the first color and the second color,
• wherein the first LED unit, the second LED unit, and the third LED unit are non-overlapping in a top view of the LED structure.