Bond pad structure for bonding improvement

A semiconductor structure, comprising:

• a semiconductor substrate having a first side and a second side;
• an interconnect structure disposed over the first side of the semiconductor substrate;
• a conductive bond pad beneath the interconnect structure and coupled to a device in the semiconductor substrate through the interconnect structure;
• a first dielectric layer directly beneath an outer edge of the conductive bond pad, extending along an inner sidewall of the semiconductor substrate, and covering a bottommost surface on the outer edge of the conductive bond pad;
• and
• a second dielectric layer directly beneath the first dielectric layer and directly beneath the outer edge of the conductive bond pad, the second dielectric layer having a material composition that differs from that of the first dielectric layer and extending along an inner sidewall of the first dielectric layer.

A semiconductor structure, comprising:

• a semiconductor substrate having a first side and a second side;
• an interconnect structure disposed over the first side of the semiconductor substrate;
• a mask layer beneath the second side of the semiconductor substrate;
• a conductive bond pad on a lower side of the interconnect structure, and disposed within an opening or recess in the semiconductor substrate and in the mask layer;
• and
• a first plurality of layers beneath an outer edge region of the conductive bond pad, extending along an inner sidewall of the semiconductor substrate corresponding to the opening or recess, and beneath the second side of the semiconductor substrate, wherein each of the first plurality of layers is substantially conformal and wherein the first plurality of layers collectively have a first total thickness that is less than or equal to a depth of the recess or opening and each of the first plurality of layers extend a non-zero distance from an outer edge of the conductive bond pad to a location directly beneath a lower surface of the conductive bond pad to partially cover the lower surface of the conductive bond pad.