Image sensor

An image sensor comprising:

• a semiconductor substrate having a first surface and a second surface opposite to the first surface;
• a first pixel region and a second pixel region located within the semiconductor substrate, wherein each of the first pixel region and the second pixel region include a photoelectric conversion device;
• a first isolation layer entirely surrounding the first pixel region and the second pixel region;
• and
• a second isolation layer located between the first pixel region and the second pixel region, wherein the first isolation layer and the second isolation layer extend from the first surface to the second surface of the semiconductor substrate, and the second isolation layer comprises a first open region that exposes a portion of an area located between the first pixel region and the second pixel region.

An image sensor comprising:

• a first pixel region and a second pixel region located within a semiconductor substrate, wherein each of the first pixel region and the second pixel region includes a photoelectric conversion device;
• a first isolation layer entirely surrounding the first pixel region and the second pixel region;
• a second isolation layer located between the first pixel region and the second pixel region;
• and
• a floating diffusion region for accumulating photocharges generated by the photoelectric conversion device in each of the first pixel region and the second pixel region,
• wherein the second isolation layer comprises an open region that exposes a portion of an area between the first pixel region and the second pixel region.