Array substrate, manufacturing method thereof and display panel
AssigneesHuizhou China Star Optoelectronics Display Co., Ltd., Tcl China Star Optoelectronics Technology Co., Ltd.
InventorXu Huang
Life of this patent
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Abstract
Provided are an array substrate, a manufacturing method thereof and a display panel; the array substrate includes a thin film transistors disposed on a base substrate, and a conductive channel of the thin film transistor is formed on a contact surface of the first semiconductor layer and the second semiconductor layer. It can avoid the interface defect state caused by the material difference when the existing conductive channel is formed on the side of the semiconductor layer close to the insulating layer, thereby solving the problem of poor lighting stability in the existing oxide semiconductor thin film transistor.
Claims18
An array substrate, comprising a base substrate and a thin film transistor disposed on the base substrate, and the thin film transistor comprises a first gate, a first semiconductor layer, a second semiconductor layer, a second gate, a source electrode and a drain electrode which are sequentially disposed on the base substrate, wherein a conductive channel of the thin film transistor is formed on a contact surface of the first semiconductor layer and the second semiconductor layer;
- and wherein a carrier concentration of the first semiconductor layer is greater than a carrier concentration of the second semiconductor layer.
A display panel, comprising an array substrate, and the array substrate comprises a base substrate and a thin film transistor disposed on the base substrate, and the thin film transistor comprises a first gate, a first semiconductor layer, a second semiconductor layer, a second gate, a source electrode and a drain electrode which are sequentially disposed on the base substrate, wherein a conductive channel of the thin film transistor is formed on a contact surface of the first semiconductor layer and the second semiconductor layer;
- and wherein a carrier concentration of the first semiconductor layer is greater than a carrier concentration of the second semiconductor layer.
A manufacturing method of an array substrate, comprising a step of providing a base substrate, and a step of manufacturing a thin film transistor on the base substrate, wherein the step of manufacturing the thin film transistor comprises:
- preparing a first gate on the base substrate;
- preparing a first gate insulating layer on the first gate and the base substrate, and preparing a first semiconductor layer on the first gate insulating layer;
- preparing a second semiconductor layer on the first semiconductor layer;
- preparing a second gate insulating layer on the second semiconductor layer and preparing a second gate on the second gate insulating layer, and employing the second gate as a shield to etch the second gate insulating layer and the second semiconductor layer to expose part of the first semiconductor layer, wherein a conductive channel of the thin film transistor is formed on a contact surface of the first semiconductor layer and the second semiconductor layer, and the first semiconductor layers located on both sides of the conductive channel form a source region and a drain region of the thin film transistor;
- preparing an interlayer insulating layer on the second gate and the first gate insulating layer, and patterning the interlayer insulating layer to form a plurality of first via holes and preparing a source electrode and a drain electrode on the interlayer insulating layer, and the source electrode and the drain electrode are respectively connected to the source region and the drain region through the corresponding first via holes.
Dependencies are inferred from the claim text.