Multi-function substrate
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsEugene I-Chun Chen, Kuan-Liang Liu, Szu-Yu Wang, Chia-Shiung Tsai, Ru-Liang Lee, Chih-Ping Chao, Alexander Kalnitsky
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Abstract
The present disclosure relates to an integrated chip. The integrated chip includes a polysilicon layer arranged on an upper surface of a base substrate. A dielectric layer is arranged over the polysilicon layer, and an active semiconductor layer is arranged over the dielectric layer. A semiconductor material is arranged vertically on the upper surface of the base substrate and laterally beside the active semiconductor layer.
Claims20
An integrated chip, comprising:
- a polysilicon layer arranged on an upper surface of a base substrate, wherein the polysilicon layer comprises grain sizes that increase from a lower surface of the polysilicon layer to an upper surface of the polysilicon layer;
- a dielectric layer arranged over the polysilicon layer;
- an active semiconductor layer arranged over the dielectric layer;
- and
- a semiconductor material arranged vertically on the upper surface of the base substrate and laterally beside the active semiconductor layer.
An integrated chip, comprising:
- a semiconductor body having a first region and a second region, wherein one or more defects are disposed along an upper surface of the semiconductor body within the second region;
- an epitaxial layer disposed over the semiconductor body, wherein the epitaxial layer covers the one or more defects;
- a polysilicon layer arranged over the semiconductor body and within the first region;
- a dielectric layer arranged over the polysilicon layer;
- an active semiconductor layer arranged over the dielectric layer;
- and
- a semiconductor material arranged over the epitaxial layer and within the second region, wherein the semiconductor material extends to above top surfaces of the polysilicon layer and the dielectric layer.
An integrated chip, comprising:
- a polysilicon layer arranged on a base substrate;
- a dielectric arranged over the polysilicon layer;
- an active semiconductor layer arranged over the dielectric;
- a semiconductor material arranged vertically over the base substrate and laterally beside the active semiconductor layer;
- a gap fill structure arranged laterally between the active semiconductor layer and the semiconductor material, wherein the gap fill structure has a bottom surface facing the base substrate and a top surface facing away from the base substrate, the top surface being wider than the bottom surface;
- and
- wherein the gap fill structure has opposing outermost sidewalls that extend below a top of the dielectric.
Dependencies are inferred from the claim text.