US 12,113,065 B2 · Fin-based field effect transistor (finFET) device with enhanced on-resistance and breakdown voltage

Abstract

A fin-based field effect transistor (finFET) device may include a fin structure having a first portion, a second portion and a third portion. The finFET device may include a first gate structure disposed over at least part of the first portion, a first source/drain region disposed in the first portion, and a second drain/source region disposed in the third portion. Each of the first, second and third portions may include one or more fin portions. The total fin count in the second portion is fewer than the total fin count in the first portion. The second portion may include a drift region. Methods of fabricating a finFET are also disclosed. The finFET device provides a lower on-resistance and a higher breakdown voltage than conventional finFETs.

Claims19

Dependent claims

A fin-based field effect transistor (finFET) device, comprising:

a fin structure comprising a first portion, a second portion, a third portion, a fourth portion and a fifth portion;
a first gate structure disposed over at least part of the first portion and a second gate structure disposed over at least part of the fifth portion;
a first source/drain region disposed in the first portion;
a second drain/source region disposed in the third portion;
and
a third source/drain region disposed in the fifth portion;
wherein:
each of the first, second and third portions comprises one or more fin portions;
and
a total number of fin portions in the second portion is fewer than a total number of fin portions in the first portion and a total number of fin portions in the fourth portion is fewer than a total number of fin portions in the fifth portion.

7 more elements

A fin-based field effect transistor (finFET) device, comprising:

a fin structure comprising a first portion, a second portion and a third portion, a fourth portion and a fifth portion;
a first gate structure disposed over at least part of the first portion and a second gate structure disposed over at least part of the fifth portion;
a first source/drain region disposed in the first portion;
and
a second drain/source region disposed in the third portion;
and
a third source/drain region disposed in the fifth portion;
wherein:
each of the first, second and third portions comprises one or more fin portions;
a total number of fin portions in the fourth portion is fewer than a total number of fin portions in the fifth portion;
a first fin portion in the first portion is connected to a first fin portion in the third portion via a first fin portion in the second portion;
and
a second fin portion in the first portion is separated from a second fin portion in the third portion by at least a separation area in the second portion.

10 more elements

A method of fabricating a fin-based field effect transistor (finFET) device, comprising:

providing a fin structure comprising a first portion, a second portion a third portion, a fourth portion and a fifth portion;
providing a first source/drain region in the first portion;
providing a second drain/source region in the third portion and a third source/drain region disposed in the fifth portion;
and
providing a first gate structure over at least part of the first portion and a second gate structure disposed over at least part of the fifth portion, wherein:
each of the first, second and third portions comprises one or more fin portions;
and
a total number of fin portions in the second portion is fewer than a total number of fin portions in the first portion;
and a total number of fin portions in the fourth portion is fewer than a total number of fin portions in the fifth portion.

6 more elements

Dependencies are inferred from the claim text.

Fin-based field effect transistor (finFET) device with enhanced on-resistance and breakdown voltage

Life of this patent

Fin-based field effect transistor (finFET) device with enhanced on-resistance and breakdown voltage

Life of this patent

Abstract

Claims19