Display substrate and preparation method thereof, and display apparatus

A method for preparing a display substrate, comprising:

• forming a gate driver on array circuit, a first common electrode lead, a first capacitor and at least one first electro-static discharge unit in the peripheral region of the substrate;
• wherein
• the gate driver on array circuit comprises a plurality of gate driver on array units and STV signal lines electrically connected to at least one gate driver on array unit;
• the first common electrode lead is connected to the STV signal line through the at least one first electro-static discharge unit;
• and
• a first capacitor electrode of the first capacitor is connected to the STV signal line, and a second capacitor electrode of the first capacitor is connected to the first common electrode lead,
• wherein the forming of the gate driver on array circuit, the first common electrode lead, the first capacitor and at least one electro-static discharge unit in the peripheral region of the substrate comprises:
• forming a first conductive layer in the peripheral region of the substrate, wherein the first conductive layer at least comprises an STV signal line, a first capacitor electrode of a first capacitor, a gate electrode of a transistor of an gate driver on array circuit, and a basic electrode layer of a first electro-static discharge unit;
• the base electrode layer at least comprises a first base electrode, a second base electrode and a third base electrode;
• sequentially forming a first insulator layer, a semiconductor layer and a second conductive layer on a side of the first conductive layer away from the substrate, wherein the semiconductor layer at least comprises an active layer of a transistor of an gate driver on array circuit, a first semiconductor region and a second semiconductor region of a first electro-static discharge unit;
• the second conductive layer at least comprises:
• a source-drain electrode of the transistors of the gate driver on array circuit, and a bonding electrode layer of the first electro-static discharge unit;
• the connection electrode layer at least comprises a first bonding electrode, a second bonding electrode, a third bonding electrode and a fourth bonding electrode;
• and
• sequentially forming a second insulator layer and a third conductive layer on a side of the second conductive layer away from the substrate, wherein the third conductive layer at least comprises a first common electrode lead, a second capacitor electrode of a first capacitor and a connection electrode layer of a first electro-static discharge unit;
• the connection electrode layer at least comprises a first connection electrode, a second connection electrode, a third connection electrode and a fourth connection electrode;
• wherein
• the first connection electrode is connected to the first base electrode and first bonding electrode, the second connection electrode is connected to the second base electrode and second bonding electrode, the third connection electrode is connected to the second base electrode and the third bonding electrode, and the fourth connection electrode is connected to the third base electrode and fourth bonding electrode;
• a first semiconductor region is disposed between the first bonding electrode and the second bonding electrode, and a second semiconductor region is disposed between the third bonding electrode and the fourth bonding electrode.