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US 12,113,056 B2Granted
Stacked dies and methods for forming bonded structures
AssigneeAdeia Semiconductor Bonding Technologies Inc.
InventorsCyprian Emeka Uzoh, Arkalgud R. Sitaram, Paul Enquist
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Abstract
In various embodiments, a method for forming a bonded structure is disclosed. The method can comprise mounting a first integrated device die to a carrier. After mounting, the first integrated device die can be thinned. The method can include providing a first layer on an exposed surface of the first integrated device die. At least a portion of the first layer can be removed. A second integrated device die can be directly bonded to the first integrated device die without an intervening adhesive.
Claims53
A bonded structure comprising:
- a carrier;
- a first die layer comprising:
- a first surface and a second surface opposite the first surface, the first surface directly bonded to the carrier without an intervening adhesive, the second surface comprising a first non-conductive region and a first conductive region;
- a first integrated device die;
- and
- a first protective material comprising a first layer disposed along a sidewall of the first integrated device die and a second layer on the first layer, each of the first and second layers comprising a silicon-containing inorganic dielectric material;
- and
- a second die layer comprising:
- a third surface comprising a second non-conductive region directly bonded to the first non-conductive region and a second conductive region directly bonded to the first conductive region;
- and
- a second integrated device die.
8 more elements
A bonded structure comprising:
- a first die layer comprising:
- an upper surface opposite a lower surface and outer side surfaces between the upper and lower surfaces, the upper surface comprising a first non-conductive region and a first conductive region;
- a first integrated device die comprising side surfaces, an active side at a lower surface of the first die layer, and through-substrate vias;
- and
- a first protective material disposed on the side surfaces of the first integrated device die;
- and
- a second die layer comprising:
- an upper surface opposite a lower surface, and outer side surfaces between the upper and lower surfaces;
- and
- a second integrated device die comprising side surfaces and a bonding surface at the lower surface of the second die layer, wherein the bonding surface comprises a second non-conductive region directly bonded to the first non-conductive region and a second conductive region directly bonded to the first conductive region;
- a third die spaced apart from the second integrated device die by a gap;
- and
- a second protective material disposed on the side surfaces of the second integrated device die, the second protective material including one or more inorganic insulating materials completely filling the gap between the second integrated device die and the third die,
- wherein the outer side surfaces of the first and second die layers are aligned in a manner characteristic of singulation after forming the first and second protective materials and directly bonding the second integrated device die to the upper surface of the first die layer.
11 more elements
A bonded structure comprising:
- a first die having a first surface, a second surface opposite the first surface, and a side surface extending between the first and second surfaces, the first die having a through-substrate via (TSV);
- a first inorganic dielectric material disposed along the side surface of the first die, the first inorganic dielectric material comprising a first inorganic dielectric layer on the side surface of the first die and a second inorganic dielectric layer on the first inorganic dielectric layer, the first inorganic dielectric layer and the second inorganic dielectric layer comprising different materials;
- a dielectric layer disposed over the first surface of the first die and the first inorganic dielectric material, a conductive material disposed in a cavity of the dielectric layer, the conductive material electrically connected to the TSV;
- a second die directly bonded to the dielectric layer without an adhesive, the second die including a conductive region directly bonded to the conductive material without an adhesive;
- and
- a second inorganic dielectric material disposed over the dielectric layer and along a side surface of the second die.
3 more elements
A bonded structure comprising:
- a first die having a first surface, a second surface opposite the first surface, and a side surface extending between the first and second surfaces;
- a first inorganic dielectric material disposed along the side surface of the first die;
- a dielectric layer disposed over the first surface of the first die and the first inorganic dielectric material;
- a conductive interconnect at a planarized surface of the dielectric layer;
- a second die directly bonded to the planarized surface of the dielectric layer and having a conductive region directly bonded to the conductive interconnect without an adhesive;
- and
- a second inorganic dielectric material disposed over the dielectric layer and along a side surface of the second die, the second inorganic dielectric material comprising a silicon nitride layer on the side surface of the second die and a silicon oxide layer on the silicon nitride layer.
4 more elements
A bonded structure, comprising:
- a silicon die having outer side surfaces;
- a first die layer comprising:
- a first surface opposite a second surface and outer side surfaces between the first and second surfaces, wherein the first surface is coupled to the silicon die and the second surface comprises a first non-conductive region and a first conductive region;
- a first integrated device die;
- a second die laterally spaced apart from the first integrated device die;
- and
- a first dielectric protective material comprising a first inorganic insulating material, wherein the first dielectric protective material is disposed on side surfaces of the first integrated device die and the second die, and the first dielectric protective material completely fills a space between the first integrated device die and the second die;
- and
- a second die layer comprising:
- a third surface opposite a fourth surface and outer side surfaces between the third and fourth surfaces, wherein the third surface comprises a second non-conductive region directly bonded to the first non-conductive region and a second conductive region directly bonded to the first conductive region;
- a third integrated device die;
- and
- a second dielectric protective material comprising a second inorganic insulating material, wherein the second dielectric protective material is disposed on side surfaces of the third integrated device die, and
- wherein the outer side surfaces of the silicon die, the first die layer, and the second die layer are aligned.
11 more elements
Dependencies are inferred from the claim text.