Microelectronic assemblies

A microelectronic assembly, comprising:

• a package substrate;
• a first insulating material layer above the package substrate, the first insulating material layer having a first side and a second side, the second side laterally opposite to the first side;
• a first die in the first insulating material layer;
• a first interconnect in the first insulating material layer, the first interconnect laterally spaced apart from the first die;
• a second interconnect in the first insulating material layer, the second interconnect laterally spaced apart from the first die, the first die laterally between the first interconnect and the second interconnect;
• a redistribution layer over the first insulating material and over the first die, the redistribution layer coupled to the first interconnect, the redistribution layer coupled to the first die, and the redistribution layer coupled to the second interconnect, the redistribution layer extending from the first side of the first insulating layer to the second side of the first insulating layer;
• a second insulating material layer over the redistribution layer, the second insulating material layer extending from the first side of the first insulating layer to the second side of the first insulating layer;
• a second die in the second insulating material layer, the second die coupled to the redistribution layer;
• a third die in the second insulating material layer, the third die coupled to the redistribution layer, and the third die laterally spaced apart from the second die, wherein the third die is thinner than the second die;
• and
• a fourth die above and coupled to the third die.

A microelectronic assembly, comprising:

• a package substrate;
• a first insulating material layer above the package substrate, the first insulating material layer having a first lateral width;
• a first die in the first insulating material layer, the first die having a top side opposite a bottom side, and a first sidewall and a second sidewall between the top side and the bottom side, the second sidewall laterally opposite the first sidewall;
• a first interconnect in the first insulating material layer, the first interconnect laterally spaced apart from the first sidewall of the first die;
• a second interconnect in the first insulating material layer, the second interconnect laterally spaced apart from the second sidewall of the first die;
• a redistribution layer over the first insulating material and over the first die, the redistribution layer coupled to the first interconnect, the redistribution layer coupled to the first die, and the redistribution layer coupled to the second interconnect;
• a second insulating material layer over the redistribution layer, the second insulating material layer having a second lateral width, the second lateral width the same as the first lateral width;
• a second die coupled to the redistribution layer, wherein the second insulating material layer surrounds and extends beyond the second die;
• and
• a third die coupled to the redistribution layer, the third die laterally spaced apart from the second die, wherein the second insulating material layer surrounds and extends beyond the third die, wherein the third die is thinner than the second die.